Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects
Identifieur interne : 000A78 ( Main/Exploration ); précédent : 000A77; suivant : 000A79Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects
Auteurs : K. Lahem [Algérie] ; R. Cherfi [Algérie] ; M. Aoucher [Algérie]Source :
- Thin Solid Films [ 0040-6090 ] ; 2001.
English descriptors
Abstract
In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current–voltage (I–V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I–V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.
Url:
DOI: 10.1016/S0040-6090(00)01576-5
Affiliations:
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Lahem</name><affiliation wicri:level="3"><country xml:lang="fr">Algérie</country><wicri:regionArea>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia, 16111 Bab-Ezzouar, Alger</wicri:regionArea><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author><author><name sortKey="Cherfi, R" sort="Cherfi, R" uniqKey="Cherfi R" first="R." last="Cherfi">R. Cherfi</name><affiliation wicri:level="3"><country xml:lang="fr">Algérie</country><wicri:regionArea>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia, 16111 Bab-Ezzouar, Alger</wicri:regionArea><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author><author><name sortKey="Aoucher, M" sort="Aoucher, M" uniqKey="Aoucher M" first="M." last="Aoucher">M. 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The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current–voltage (I–V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I–V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.</div></front></TEI><affiliations><list><country><li>Algérie</li></country><region><li>Wilaya d'Alger</li></region><settlement><li>Alger</li></settlement></list><tree><country name="Algérie"><region name="Wilaya d'Alger"><name sortKey="Lahem, K" sort="Lahem, K" uniqKey="Lahem K" first="K." last="Lahem">K. Lahem</name></region><name sortKey="Aoucher, M" sort="Aoucher, M" uniqKey="Aoucher M" first="M." last="Aoucher">M. Aoucher</name><name sortKey="Cherfi, R" sort="Cherfi, R" uniqKey="Cherfi R" first="R." last="Cherfi">R. Cherfi</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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